V.F. Dryakhlushin, A. Klimov, V. V. Rogov, N.V. Vostokov
{"title":"Method of the near-field optical nanolithography using tapered optical fiber","authors":"V.F. Dryakhlushin, A. Klimov, V. V. Rogov, N.V. Vostokov","doi":"10.1109/ICTON.2003.1264640","DOIUrl":null,"url":null,"abstract":"A method of contact scanning near-field optical lithography has been developed to enable fabrication of elements with characteristic dimensions of about 30 - 50 nanometres. The method involves deposition of a thin-layer polymer-metal coating, photothermal nonplastic deformation of top metal layer with a probe microscope, the transfer of the pattern through the polymer of dry etching and the formation of various nanoelements through this prepared mask. The method is applicable to any materials (metal, dielectric, light/heavy doped semiconductors) relevant to the formation of different nanometre objects (metal, dielectric, etched in surface or its combinations) on their surface.","PeriodicalId":272700,"journal":{"name":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 2003 5th International Conference on Transparent Optical Networks, 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTON.2003.1264640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
A method of contact scanning near-field optical lithography has been developed to enable fabrication of elements with characteristic dimensions of about 30 - 50 nanometres. The method involves deposition of a thin-layer polymer-metal coating, photothermal nonplastic deformation of top metal layer with a probe microscope, the transfer of the pattern through the polymer of dry etching and the formation of various nanoelements through this prepared mask. The method is applicable to any materials (metal, dielectric, light/heavy doped semiconductors) relevant to the formation of different nanometre objects (metal, dielectric, etched in surface or its combinations) on their surface.
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