Technology exploration for adaptive power and frequency scaling in 90nm CMOS

M. Meijer, F. Pessolano, J. P. D. Gyvez
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引用次数: 24

Abstract

In this paper we examine the expectations and limitations of design technologies such as adaptive voltage scaling (AVS) and adaptive body biasing (ABB) in a modem deep sub-micron process. To serve this purpose, a set of ring oscillators was fabricated in a 90nm triple-well CMOS technology. The analysis hereby presented is based on two ring oscillators running at 822MHz and 93MHz, respectively. Measurement results indicate that it is possible to reach 13.8/spl times/ power savings by 3.4/spl times/ frequency downscaling using AVS, /spl plusmn/11% power and /spl plusmn/8% frequency tuning at nominal conditions using ABB only, 22/spl times/ power savings with 5/spl times/ frequency downscaling by combining AVS and ABB, as well as 22/spl times/ leakage reduction.
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90纳米CMOS自适应功率和频率缩放技术探索
在本文中,我们研究了自适应电压缩放(AVS)和自适应体偏置(ABB)等设计技术在现代深亚微米工艺中的期望和局限性。为了实现这一目的,采用90nm三孔CMOS技术制造了一组环形振荡器。本文给出的分析是基于两个分别工作在822MHz和93MHz的环形振荡器。测量结果表明,在标称条件下,仅使用ABB就可以实现/spl plusmn/11%的功率和/spl plusmn/8%的频率调谐,通过AVS和ABB的组合,可以实现/spl倍/ 5/spl倍/频率的功率节省22/spl倍/功率节省22/spl倍/频率减少22/spl倍/泄漏减少。
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