A New Approach To Series Semiconductor Switch Applications

H. Tromp, P. Swart, D. Mulder, J. J. Nel, H. V. von Bergmann
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引用次数: 1

Abstract

Previous reports showed that series semiconductor stacks could outperform thyratrons in ccrtain laser applications'. The arduous requirements of ensuring voltage sharing in series-connected high-voltage semiconductor configurations, does however limit the implementation of this technique. A new approach to solving this problem is the series stacking of multiple LC inversion stages, operating at voltages that can be withheld by single scmiconductor elcmcnts. Each stage consists of a series pair of capacitors, a thyristor with optically isolated gate drive circuitry and isolated charging transformer windings with associated diode networks. The current and voltage ratings requircd of the thyristors and diodes in each of the stages can be adapted to fall well within the capabilities of commercial devices. The peak current requirements of the thyristors, laid down by the pulse width and pulse energy, can be accommodated, as the switching of large peak currents at short pulse widths by mcans of thyristors has bccti demonstrated in lhe litcraturc2. A single stage syslcm, charging 1 J at 2 kV, with a pulse width of 1.5 pS and a peak current of 2.5 kA has been constructed and tcstcd. An overall energy eficiency of 80% has been achicvcd. Experimental results are presented.
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串联半导体开关应用的新途径
先前的报告显示,在某些激光应用中,串联半导体堆叠的性能可能优于闸流管。然而,在串联的高压半导体配置中确保电压共享的艰巨要求确实限制了该技术的实现。解决这一问题的一种新方法是多个LC反转级的串联堆叠,在单个半导体元件可以保留的电压下工作。每个级由一系列电容器对、具有光隔离栅驱动电路的晶闸管和具有相关二极管网络的隔离充电变压器绕组组成。每个级的晶闸管和二极管的额定电流和电压要求可以在商业设备的能力范围内调整。晶闸管的峰值电流要求,由脉冲宽度和脉冲能量决定,可以被容纳,因为在短脉冲宽度下通过晶闸管切换大的峰值电流已经在文献中证明了2。构建并测试了一个单级系统,在2kv下充电1j,脉冲宽度为1.5 pS,峰值电流为2.5 kA。整体能源效率达到80%。给出了实验结果。
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