Peter Abele, Michael Schäfer, J. Splettstößer, Martin Thinnes, Hermann Stieglauer, Dag Behammer
{"title":"Process Stabilization and Sensitivity Analyses of a Single Recess GaAs pHEMT Process using Device Simulations","authors":"Peter Abele, Michael Schäfer, J. Splettstößer, Martin Thinnes, Hermann Stieglauer, Dag Behammer","doi":"10.1109/EMICC.2008.4772227","DOIUrl":null,"url":null,"abstract":"In this work we investigate device simulations for a sensitivity analyses on the PH25 single recess pHEMT process. The relation of the most critical process and epitaxial parameters on the electrical DC parameters are presented and discussed. The control of the recess etching is an important process module in stabilizing the electrical parameters. Improving the recess etching resulted in a significant reduced spread of the electrical parameters.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2008.4772227","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
In this work we investigate device simulations for a sensitivity analyses on the PH25 single recess pHEMT process. The relation of the most critical process and epitaxial parameters on the electrical DC parameters are presented and discussed. The control of the recess etching is an important process module in stabilizing the electrical parameters. Improving the recess etching resulted in a significant reduced spread of the electrical parameters.
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