MOSFET's Gate Resistance Influence on Voltage Imbalance of Two-Switch Flyback Converter

M. Pipíška, J. Cervený, P. Spánik
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Abstract

proposed topic discuses design of auxiliary power supply, whose topology is based on the 2-switch flyback converter. The specifics of this solution is related to possibility of very wide input voltage supply (1-phase/3-phase AC or 120–650 Vdc) together with symmetrical outputs supplying auxiliary circuits of main power stage. The main outcome of paper is design proposal on main circuit of auxiliary supply (AUX) as well as on control and driving sub circuits. Control and driving parts have been analysed more in detail due to arise of voltage imbalance on power transistors during operation under high input voltage. This imbalance is caused by the topology itself because of different emitter potentials and thus dynamics that is related to Miller effect. Within this paper the solution how to overcome this deficiency is based on tuning the values of gate resistances on power MOSFETs. The procedure is verified by experimental testing. At the end, the performance of AUX is verified for full operation range.
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MOSFET 栅极电阻对双开关反激式转换器电压不平衡的影响
本课题讨论辅助电源的设计,其拓扑结构基于双开关反激式转换器。该解决方案的特殊性在于可以提供非常宽的输入电压(1 相/3 相交流电或 120-650 伏直流电),同时提供对称输出,为主功率级的辅助电路供电。本文的主要成果是辅助电源 (AUX) 主电路以及控制和驱动子电路的设计建议。由于功率晶体管在高输入电压下工作时会出现电压不平衡,因此对控制和驱动部分进行了更详细的分析。这种不平衡是由拓扑结构本身引起的,因为不同的发射极电位和动态与米勒效应有关。本文的解决方案是通过调整功率 MOSFET 的栅极电阻值来克服这一缺陷。实验测试验证了这一过程。最后,在整个工作范围内对 AUX 的性能进行了验证。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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