{"title":"Spin-orbit torque magnetoresistive random-access memory (SOT-MRAM)","authors":"C. Bi, N. Sato, Shan X. Wang","doi":"10.1016/B978-0-08-102584-0.00007-3","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":354278,"journal":{"name":"Advances in Non-Volatile Memory and Storage Technology","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advances in Non-Volatile Memory and Storage Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/B978-0-08-102584-0.00007-3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
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