{"title":"New IGBT development for traction drive and wind power","authors":"J. Bauer, T. Duetemeyer, L. Lorenz","doi":"10.1109/IPEC.2010.5543293","DOIUrl":null,"url":null,"abstract":"Chip technologies are developed, which introduce an IGBT with a trench cell and field stop technology for 1200 V up to 6500 V voltage applications. For wind power 1200 V and 1700V IGBT 4th generation optimized for low, medium and high power in combination with a new package concept PrimePACKTM will be described. For the 6.5 kV voltage class significant trade off improvements of the on state losses and the switching losses by cell optimization of the IGBT is demonstrated together with highest short circuit and switching robustness. In addition, an improved 6.5kV EC diode with high robustness and surge current performance is demonstrated. Nevertheless, an EC (emitter controlled) diode improvement with CIBH (controlled injection of backside holes) for 3.3 kV is shown in IHV modules with 1500 A current rating at 150°C temperature.","PeriodicalId":353540,"journal":{"name":"The 2010 International Power Electronics Conference - ECCE ASIA -","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 2010 International Power Electronics Conference - ECCE ASIA -","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPEC.2010.5543293","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13
Abstract
Chip technologies are developed, which introduce an IGBT with a trench cell and field stop technology for 1200 V up to 6500 V voltage applications. For wind power 1200 V and 1700V IGBT 4th generation optimized for low, medium and high power in combination with a new package concept PrimePACKTM will be described. For the 6.5 kV voltage class significant trade off improvements of the on state losses and the switching losses by cell optimization of the IGBT is demonstrated together with highest short circuit and switching robustness. In addition, an improved 6.5kV EC diode with high robustness and surge current performance is demonstrated. Nevertheless, an EC (emitter controlled) diode improvement with CIBH (controlled injection of backside holes) for 3.3 kV is shown in IHV modules with 1500 A current rating at 150°C temperature.
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