Trapping centers engineering by including of nanoparticles into organic semiconductors

Abstract

This contribution reports the fabrication of pentacene organic field-effect transistor (OFET) with designed space-charge. By including a single layer of silicon nanoparticles as trapping centers, it was possible to create a space-charge field with strong influence on carrier injection and transport. It was found that NPs work as trapping centers of charge carriers. We demonstrate that nanoparticles film can serves for design of accumulated charge in OFET and thus change of charge injection time and transport properties. This behaviour is fully supported by theoretical analysis of the Maxwell-Wagner model. This gives us powerful tool for voltage control of carrier injection time by applied voltage and by setup of nanoparticle density is a possible design electric property.