New Probe Design for Hardware Characterization by ElectroMagnetic Fault Injection

Clément Gaine, J. Nikolovski, D. Aboulkassimi, J. Dutertre
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引用次数: 1

Abstract

ElectroMagnetic Fault Injection requires two main devices, a pulse generator and an electromagnetic (EM) injection probe. To improve security characterizations, inductive probes need to be optimized as regards the pulse waveform and field distribution. The improvement of these parameters leads to greater electromotive forces generated in the integrated circuits, which reinforces the efficiency of the attacks by fault injections. This paper presents a complete model of the electromagnetic field induced at the target surface according to Biot and Savart's law. This work defines the relevant design parameters of the new probes that are used for hardware characterization of the target components. These new probes reduce the voltage fault threshold required to disturb the execution of a program in the target. This paper also presents results related to the optimization of spatial resolution and inductive power at the target circuit surface. Understanding these phenomena then helps to implement countermeasures and best secure the strategies of the key IC components.
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电磁故障注入硬件表征探头设计
电磁故障注入需要两个主要设备:脉冲发生器和电磁注入探头。为了提高安全性能,需要对感应探头的脉冲波形和场分布进行优化。这些参数的改进导致集成电路中产生更大的电动势,从而增强了故障注入攻击的效率。本文根据Biot和Savart定律建立了靶表面感应电磁场的完整模型。这项工作定义了用于目标组件硬件表征的新探针的相关设计参数。这些新探头降低了干扰目标中程序执行所需的电压故障阈值。本文还介绍了与空间分辨率和目标电路表面感应功率优化有关的结果。了解这些现象有助于实施对策并最好地保护关键IC组件的策略。
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