C. Seifert, J. Orrell, D. Coomes, B.L. LaMarche, M. Bliss, K. Lynn, K. Jones, G. Campi
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引用次数: 1
Abstract
Recent advances in the growth and doping of CdZnTe using low-pressure Bridgman methods have allowed for the production of high-resistivity crystals. In this work, we present electrical characterization measurements on samples of CdZnTe grown at Washington State University. We demonstrate the capabilities of the CdZnTe material to perform as radiation detectors and correlate detector performance with crystal growth conditions.
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