A 2.0 to 3.0 GHz CMOS low noise amplifier and its applications

Ravinder Kumar, V. Srivastava
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引用次数: 5

Abstract

This paper presents a 2 GHz to 3 GHz Low Noise Amplifier (LNA) design based on a cascode topology. The proposed method is addressed to optimize noise performance and power efficiency while maintaining good input and output matching. This LNA has a measured power gain of 13.5dB and noise figure of 1.5 dB. The output insertion loss S22 is •9dB. input return loss (s11) is •22dB. The design simulation process is using Advance Design System (ADS) software and implemented in TSMC 0.18 µm CMOS technology with very low power dissipation.
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一种2.0 ~ 3.0 GHz CMOS低噪声放大器及其应用
本文提出了一种基于级联码拓扑结构的2ghz至3ghz低噪声放大器(LNA)设计。该方法旨在优化噪声性能和功率效率,同时保持良好的输入和输出匹配。该LNA的实测功率增益为13.5dB,噪声系数为1.5 dB。输出插入损耗S22为9dB。输入回波损耗(s11)为22dB。设计仿真过程采用先进设计系统(ADS)软件,采用台积电0.18µm CMOS技术实现,功耗极低。
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