Design and optimization of a W-band extended interaction klystron amplifier

Zaojin Zeng, Zhou Lin, L. Wenjun, Chen Hongbin
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引用次数: 4

Abstract

A three dimension high frequency circuit of an W band extended interaction klystron amplifier (EIA) is designed. With an electron beam of 17 kV and 0.34 A, and an input microwave power of 30 mW at 94.77 GHz, an average power of 580 W with power conversion efficiency of 10.03% , gain of 42.6 dB, 3dB Instantaneous bandwidth of more than 150 MHz is obtained. However, a peak output power of 50 mW is obtained by experiment. Based on the experiment result, optical system and RF circuit are optimized. Via optimization, a beam transmission of 100% is achieved, and with an electron beam of 18 kV and 0.28 A, and an input microwave power of 30 mW at 94.95 GHz, an average power of 374 W is obtained.
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w波段扩展相互作用速调管放大器的设计与优化
设计了一种W波段扩展交互作用速调管放大器的三维高频电路。在17kv、0.34 A的电子束下,在94.77 GHz下输入30mw的微波功率,平均功率为580 W,功率转换效率为10.03%,增益为42.6 dB,瞬时带宽大于150mhz。实验得到的输出功率峰值为50mw。根据实验结果,对光学系统和射频电路进行了优化。通过优化,实现了100%的束流传输,在18kv、0.28 a的束流条件下,在94.95 GHz频率下,输入30mw的微波功率,平均功率为374 W。
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