Spectrophotometric and Raman spectroscopic characterization of ALD grown TiO2 thin films

J. Aarik, A. Kasikov, A. Niilisk
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引用次数: 4

Abstract

Properties of titanium dioxide thin films grown by atomic layer deposition from TiCl4 and H2O on SiO2 substrates were characterized using Raman spectroscopy and spectrophotometry methods. Raman spectroscopy revealed transformation of the film structure from amorphous to anatase, to anatase/rutile mixture and then back to anatase with the increase of deposition temperature from 100 to 680oC. Variations in the growth rate, refractive index and extinction index accompanied these structural changes. Analysis of the transmission curves demonstrated that differently from amorphous films, the crystalline films were optically inhomogeneous in the growth direction.
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ALD生长TiO2薄膜的分光光度和拉曼光谱表征
采用拉曼光谱和分光光度法对二氧化钛薄膜的性能进行了表征。拉曼光谱显示,随着沉积温度从100℃升高到680℃,薄膜结构由无定形转变为锐钛矿,再转变为锐钛矿/金红石混合物,再转变为锐钛矿。生长速率、折射率和消光指数随结构变化而变化。透射曲线分析表明,与非晶膜不同,晶体膜在生长方向上具有光学不均匀性。
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