M. K. Mahata, Saptarsi Ghosh, S. Jana, P. Mukhopadhyay, A. Bag, Syed Mukulika, Rahul Kumar Dinara, Subhashis Das, A. Chakraborty, D. Biswas
{"title":"Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE","authors":"M. K. Mahata, Saptarsi Ghosh, S. Jana, P. Mukhopadhyay, A. Bag, Syed Mukulika, Rahul Kumar Dinara, Subhashis Das, A. Chakraborty, D. Biswas","doi":"10.1109/TECHSYM.2014.6808082","DOIUrl":null,"url":null,"abstract":"High quality pseudomorphic Al0.15Ga0.85As/GaAs heterostructure was grown on an semi-insulating GaAs(100) substrate by Molecular Beam Epitaxy(MBE). Analysis of this structure was done by Photoluminescence (PL), HALL and High Resolution X-Ray diffraction (HRXRD). The nominal structure was confirmed by HRXRD, and aluminum mole fraction was measured from peak separation of the AlGaAs-GaAs (004) reflections. The layer thickness, and interface roughness were estimated from X-ray reflectivity (XRR) by fit with computer simulation. The carrier concentration, mobility and sheet resistance were measured from temperature dependent Hall experiment. The transport properties of the as-grown structure are found to be at par with the best literature reports.","PeriodicalId":265072,"journal":{"name":"Proceedings of the 2014 IEEE Students' Technology Symposium","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2014 IEEE Students' Technology Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TECHSYM.2014.6808082","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
High quality pseudomorphic Al0.15Ga0.85As/GaAs heterostructure was grown on an semi-insulating GaAs(100) substrate by Molecular Beam Epitaxy(MBE). Analysis of this structure was done by Photoluminescence (PL), HALL and High Resolution X-Ray diffraction (HRXRD). The nominal structure was confirmed by HRXRD, and aluminum mole fraction was measured from peak separation of the AlGaAs-GaAs (004) reflections. The layer thickness, and interface roughness were estimated from X-ray reflectivity (XRR) by fit with computer simulation. The carrier concentration, mobility and sheet resistance were measured from temperature dependent Hall experiment. The transport properties of the as-grown structure are found to be at par with the best literature reports.
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