{"title":"Design of a Ka-band MMIC Low Noise Amplifier for 5G applications","authors":"Ngoc Nguyen Xuan, Hoang Nguyen Huy, Manh Luong Duy","doi":"10.1109/NICS54270.2021.9701480","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a design diagram of a low noise amplifier using NP2500MS transistor 0.25 pm AlGaN/ GaN HEMT technology of WIN Semiconductor, Taiwan, consisting of 2 stages at center frequency 25.8 GHz, this is the frequency band used for the 5th Generation Mobile Communications and some other K/Ka-band applications. With this transistor, the LNA has achieved a noise Figure less than 1.65 dB and the average Gain is 13 dB in the whole bandwidth.","PeriodicalId":296963,"journal":{"name":"2021 8th NAFOSTED Conference on Information and Computer Science (NICS)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 8th NAFOSTED Conference on Information and Computer Science (NICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NICS54270.2021.9701480","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper, we propose a design diagram of a low noise amplifier using NP2500MS transistor 0.25 pm AlGaN/ GaN HEMT technology of WIN Semiconductor, Taiwan, consisting of 2 stages at center frequency 25.8 GHz, this is the frequency band used for the 5th Generation Mobile Communications and some other K/Ka-band applications. With this transistor, the LNA has achieved a noise Figure less than 1.65 dB and the average Gain is 13 dB in the whole bandwidth.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
