Density Functional Theory Studies of Vacancies in Penta-Graphene Nanoribbons

Khaldoun Tarawneh
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引用次数: 1

Abstract

We use the first principal pseudopotential calculations combined with the generalized gradient approximation to investigate the structural, magnetic and electronic properties of defective penta-graphene one dimensional monolayer. Our calculations predict that, the equilibrium geometrical structure with a single vacancy defect shows a substantial reconstruction of atomic positions. The magnetic and electronic properties of penta-graphene nanoribbons can be adjusted by single vacancy defect The electronic bandgap depends on the ribbon width as well as on the single vacancy location relative to the ribbon edge. The formation energy of a single vacancy in penta-graphene nanoribbon is found to be 8.4 eV in the central region of the ribbons and decreases to 7.1 eV when the vacancy location is closer to the ribbon edge. Our results for a stable penta-graphene nanoribbon with a controllable bandgap is promising for nanoelectronic devices
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五石墨烯纳米带空位的密度泛函理论研究
我们使用第一主赝势计算结合广义梯度近似研究了缺陷五石墨烯一维单层的结构、磁性和电子性质。我们的计算预测,具有单个空位缺陷的平衡几何结构显示出原子位置的实质性重建。单空位缺陷可以调节五石墨烯纳米带的磁性和电子性能,电子带隙取决于带的宽度以及相对于带边缘的单空位位置。在五石墨烯纳米带的中心区域,单个空位的形成能为8.4 eV,当空位位置靠近带边缘时,形成能降至7.1 eV。我们的研究结果表明,具有可控带隙的稳定五石墨烯纳米带在纳米电子器件中很有前景
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