{"title":"A high quality factor varactor technology evaluation","authors":"R. Debroucke, S. Jan, J. Larchanche, C. Gaquière","doi":"10.1109/RFIC.2010.5477308","DOIUrl":null,"url":null,"abstract":"Providing a high quality factor scalable varactor in an integrated technology is a wager. How to insure that your device will give the highest quality factor possible? In order to response this questions, we let the bases of a varactor gauge combining electrical performance and geometrical sizes. Giving a targeted capacitance, it could furnish a qualitive idea of the adequacy with technology performance. It could furnish also a indicator for comparison with other devices. As example of varactor gauge application, we present a comparison between two diode varactor devices in two BiCMOS technologies.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"159 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
Providing a high quality factor scalable varactor in an integrated technology is a wager. How to insure that your device will give the highest quality factor possible? In order to response this questions, we let the bases of a varactor gauge combining electrical performance and geometrical sizes. Giving a targeted capacitance, it could furnish a qualitive idea of the adequacy with technology performance. It could furnish also a indicator for comparison with other devices. As example of varactor gauge application, we present a comparison between two diode varactor devices in two BiCMOS technologies.
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