Transition metal doped metal oxide nanostructures synthesized by arc discharge method

F. Fang, J. Kennedy, J. Futter, A. Markwitz, E. Manikandan
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引用次数: 2

Abstract

Doping metal oxides with metallic impurities has been the subject of previous studies for enhanced sensing performance. In this paper, we present a review on syntheses of transition metal doped metal oxide nanostructures using arc discharge method. Tungsten oxide was doped with Palladium, Scandium and Vanadium, respectively. Nickel was chosen to dope Zinc oxide by arc discharge method. It is demonstrated that dopants not only change the morphology of metal oxide nanostructures but also help to achieve an improved electrical conductivity. Because it is easy to tailor the morphology by adjusting the arc discharge parameters and dopant can be prescribed in the preparation of the anode material, the arc discharge is considered to be a fast and inexpensive synthesis method for doping which can be used to produce high quality doped metal oxide nanostructures for chemical sensing measurements.
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电弧放电法合成过渡金属掺杂金属氧化物纳米结构
在金属氧化物中掺杂金属杂质一直是提高传感性能的研究课题。本文综述了利用电弧放电法合成过渡金属掺杂金属氧化物纳米结构的研究进展。在氧化钨中分别掺杂钯、钪和钒。采用电弧放电法制备了氧化锌。结果表明,掺杂剂不仅改变了金属氧化物纳米结构的形貌,而且有助于提高金属氧化物的导电性。由于在阳极材料的制备过程中可以通过调整电弧放电参数来调整其形貌,并且可以指定掺杂剂,因此电弧放电被认为是一种快速、廉价的掺杂合成方法,可用于生产高质量的用于化学传感测量的掺杂金属氧化物纳米结构。
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