100V GaN for Highly Efficient 1kW Motor Drive Applications

A. Kempitiya, Hrach Amirkhanian, Srikanth Yerra, K. Kelkar
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Abstract

In this work, Infineon’s 100V 3mΩ CoolGaN™ is evaluated and compared with a 100V similar Rdson MOSFET using OptiMOS™5 silicon technology in a three-phase inverter for battery powered motor drive applications. In order to minimize conduction losses, 30ns dead time is achieved for GaN due to its lower gate and output charge in comparison to 60ns of dead time for silicon. A motor-generator setup is developed to evaluate a 48V drone motor up to ~1kW of inverter power. For a motor speed of 4000RPM, with a bus voltage of 48V and 100 kHz switching frequency, GaN shows higher efficiency across the entire load range. At 1/3rd load (~300W), 98.67% and at full load (~900W) 98.10% power efficiency values are achieved. At light load (~45W), a significant increase of ~5% is also observed in efficiency. This experimentally demonstrates that 100V CoolGaN™ is ideal for developing high frequency switching inverters with high power densities and motor efficiencies in the kilowatt power range.
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100V GaN用于高效1kW电机驱动应用
在这项工作中,我们对英飞凌的100V 3mΩ CoolGaN™进行了评估,并将其与用于电池供电电机驱动应用的三相逆变器中使用OptiMOS™5硅技术的100V类似Rdson MOSFET进行了比较。为了最小化传导损失,氮化镓的死区时间为30ns,因为其栅极和输出电荷较低,而硅的死区时间为60ns。开发了一种电机-发电机装置,用于评估高达~1kW逆变功率的48V无人机电机。当电机转速为4000RPM,母线电压为48V,开关频率为100khz时,GaN在整个负载范围内显示出更高的效率。在1/3负载(~300W)时,功率效率值达到98.67%,在满负荷(~900W)时达到98.10%。在轻负荷(~45W)下,效率显著提高~5%。该实验表明,100V CoolGaN™是开发具有高功率密度和千瓦功率范围内电机效率的高频开关逆变器的理想选择。
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