EHF Power Generation for Tactical, Mobile and Strategic MILSATCOM Terminals

Abstract

EHF MILSATCOM earth terminals are rapidly becoming a reality. EHF power sources (transmitters) are both a high technology and large production cost element of most terminal implementation approaches. To provide the MILSATCOM community with a current technology status, an industry survey has been conducted among several governmental procurement organizations and potential industry suppliers. The survey, as presented in this paper, addresses specific needs of planned terminals at 45 and 30 GHz. Both devices and high-power amplifiers (HPA's) are investigated in the survey, with particular attention given to near-term requirements. The paper considers both TWT and solid-state devices available now as developmental products. IMPATT diodes provide the most extensive effort to date in solid-state device technology, with power FET's offering a long-term solution with some inherent circuit combining advantages. IMPATT diodes are under development applying silicon (Si), gallium arsenide (GaAs), and indium phosphide (InP), materials to device requirements on a frequency selective basis. Current TWT technology is centered around coupled cavity and wound-helix slow-circuit approaches. A brief review of major EHF MILSATCOM earth terminal requirements is presented as it relates to the transmitter power and platform constraints.