Optical response of very thin As-Se films

P. Gushterova, P. Sharlandjiev, K. Petkov
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引用次数: 1

Abstract

Thin chalcogenide (As-S, As-Se, Ge-Se, etc.) films find applications in many branches of modern optics: for design of optical systems operating in VIS and IR, as recording material for holographic storage, or as inorganic photoresists, etc. Very thin films are included in multi-layered CD-R and DVD structures for improvements of their performance and increase of storage capacity. That is why developments of different methods for determination of optical constants (n - refractive index, k - extinction coefficient and d - physical thickness) best adapted for concrete optical problems are still needed. Recently we have presented a method for (n, k, d) evaluation of very thin metal or semiconductor films from spectrophotometric data. Here we present investigation of the optical constants of vacuum deposited As-Se thin layers with d between 15 and 30 nm. The dispersion of the complex refractive index is studied in the spectral range of 400 - 1000 nm. The obtained results are interpreted within the frame of single oscillator Wemple-DiDomenico model. Comparison is made with data on thicker evaporated layers. We demonstrate the importance of the analysis of the uncertainties in (n, k, d) determination for the adequate choice of the film physical thickness.
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极薄As-Se薄膜的光学响应
薄硫族化合物(as - s, as - se, Ge-Se等)薄膜在现代光学的许多分支中都有应用:用于设计可见光和红外光学系统,作为全息存储的记录材料,或作为无机光阻剂等。为了改善CD-R和DVD的性能和增加存储容量,在多层CD-R和DVD结构中加入了非常薄的薄膜。这就是为什么仍然需要发展不同的方法来确定最适合具体光学问题的光学常数(n -折射率,k -消光系数和d -物理厚度)。最近,我们提出了一种方法(n, k, d)评价非常薄的金属或半导体薄膜的分光光度数据。本文研究了d在15 ~ 30 nm之间的真空沉积As-Se薄层的光学常数。研究了复合折射率在400 ~ 1000 nm光谱范围内的色散特性。所得结果在单振子Wemple-DiDomenico模型框架内解释。与较厚蒸发层的数据进行了比较。我们证明了(n, k, d)测定中的不确定度分析对于适当选择薄膜物理厚度的重要性。
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