A packaged X-band low noise amplifier

Abstract

The design of commercially packaged LNA at X band frequencies necessitates the examination of different circuit aspects and poses some significant challenges. The selected package and the resulting parasitic need to be carefully examined as they have a significant impact on the design. While parasitic can easily degrade LNA performance, package's high Q inductance can be leveraged to lower input losses and improve noise performance. In this work, commercial SiGe 0.18 technology was selected for its inherent high gain and low noise. RF grounding approach in this design achieved minimal parasitic effects. Extensive electromagnetic simulations needed to model and simulate circuit layout and package parasitic. Simulated results at room temperature predict LNA Gain of over 19dB, NF lower than 1.3 dB and IIP3 of −6dBm.