Design and Optimization of TeraFET Spectrometer

Abstract

Terahertz (THz) or sub-terahertz excitation of phase-shifted resonant or overdamped plasma waves propagating in the opposite directions in a short channel of a field effect transistor enables the use of such TeraFETs as THz spectrometers. We design and optimize the TeraFET spectrometer using the validated THz SPICE model for silicon metal-oxide-semiconductor field-effect transistors (Si MOSFETs). Our simulations show that the spectrometer response and sensitivity could be enhanced by over three and two orders of magnitude respectively with biasing scheme optimization. The proposed spectrometer design allows for an accurate determination of the frequency of the THz radiation impinging on a TeraFET.