E. Crabbé, B. Meyerson, D. Harame, J. Stork, A. Megdanis, J. Cotte, J. Chu, M. Gilbert, C. Stanis, J. Comfort, G. Patton, S. Subbanna
{"title":"113-GHz fT graded-base SiGe HBTs","authors":"E. Crabbé, B. Meyerson, D. Harame, J. Stork, A. Megdanis, J. Cotte, J. Chu, M. Gilbert, C. Stanis, J. Comfort, G. Patton, S. Subbanna","doi":"10.1109/DRC.1993.1009564","DOIUrl":null,"url":null,"abstract":"A novel low-thermal cyclc proccss was used to fabricatc epitaxial SiGe-base heterojunction bipolar transistors (HBTs) with record unity current gain cutoff frequencies. The process includes an in situ phosphorus-dopcd polysilicon emitter which requires only a 800°C-10s anneal. A peak fT of 113 GHz at VCB of 1V was obtained for an intrinsic base sheet resistance of 7 kΩ/square.","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1993.1009564","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 24
Abstract
A novel low-thermal cyclc proccss was used to fabricatc epitaxial SiGe-base heterojunction bipolar transistors (HBTs) with record unity current gain cutoff frequencies. The process includes an in situ phosphorus-dopcd polysilicon emitter which requires only a 800°C-10s anneal. A peak fT of 113 GHz at VCB of 1V was obtained for an intrinsic base sheet resistance of 7 kΩ/square.
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