A Class-D CMOS DCO with an on-chip LDO

Luca Fanori, T. Mattsson, P. Andreani
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引用次数: 18

Abstract

This paper presents the co-design of a class-D digitally-controlled oscillator (DCO) and a low-dropout voltage regulator (LDO) generating the supply voltage for the DCO. Despite the high intrinsic supply pushing of the class-D oscillator topology, the LDO noise has only a very marginal impact on the DCO phase noise. The class-D DCO and LDO have been integrated in a 65 nm CMOS process without any thick top metal layer. The oscillation frequency is tunable between 3.0 GHz and 4.3 GHz, for a tuning range of 36%, with a fine frequency step below 3kHz and a fine frequency range of 10 MHz (both measured at 3GHz). Drawing 9.0 mA from 0.4V (corresponding to an unregulated supply voltage of 0.6 V), the phase noise is -145.5 dBc/Hz at a 10 MHz offset from a 3.0GHz carrier. The resulting FoM is 189.5 dBc/Hz, and varies less than 1dB across the tuning range. The FoM increases to above 190 dBc/Hz when the regulated supply voltage is 0.5 V.
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带有片上LDO的d类CMOS DCO
本文介绍了d类数字控制振荡器(DCO)和为DCO提供电源电压的低压稳压器(LDO)的协同设计。尽管d类振荡器拓扑具有很高的本征电源推力,但LDO噪声对DCO相位噪声的影响非常小。d级DCO和LDO集成在65纳米CMOS工艺中,没有任何厚的顶部金属层。振荡频率在3.0 GHz和4.3 GHz之间可调,调谐范围为36%,3kHz以下的精细频率阶跃和10mhz的精细频率范围(均在3GHz测量)。从0.4V引出9.0 mA(对应于0.6 V的非调节电源电压),在与3.0GHz载波偏移10mhz时相位噪声为-145.5 dBc/Hz。得到的FoM为189.5 dBc/Hz,在整个调谐范围内变化小于1dB。当稳压电源电压为0.5 V时,FoM增大到190 dBc/Hz以上。
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