E. Laskin, P. Chevalier, B. Sautreuil, S. Voinigescu
{"title":"A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters","authors":"E. Laskin, P. Chevalier, B. Sautreuil, S. Voinigescu","doi":"10.1109/BIPOL.2009.5314245","DOIUrl":null,"url":null,"abstract":"This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz and 4 Gb/s through the air using a single-chip silicon transceiver at 140 GHz. The transceiver, which consists of a 140-GHz push-push VCO with a static divide-by-64 chain, a 140-GHz amplitude modulator, a 140-GHz LO amplifier, a fundamental frequency mixer, a 140-GHz LNA, and a variable gain IF amplifier, has a downconversion gain of 30 dB and a noise figure of 12.3 dB. It is fabricated in a 130-nm SiGe BiCMOS technology, occupies an area of 1.44 mm2, and consumes 1.5 W.","PeriodicalId":267364,"journal":{"name":"2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"62","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2009.5314245","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 62
Abstract
This paper describes the first demonstration of Doppler detection and data transmission at 140 GHz and 4 Gb/s through the air using a single-chip silicon transceiver at 140 GHz. The transceiver, which consists of a 140-GHz push-push VCO with a static divide-by-64 chain, a 140-GHz amplitude modulator, a 140-GHz LO amplifier, a fundamental frequency mixer, a 140-GHz LNA, and a variable gain IF amplifier, has a downconversion gain of 30 dB and a noise figure of 12.3 dB. It is fabricated in a 130-nm SiGe BiCMOS technology, occupies an area of 1.44 mm2, and consumes 1.5 W.