{"title":"Measuring complex for thin films degradation investigations under various external actions","authors":"N.V. Pykhtin, A. Borovsky, A.P. Shugurov","doi":"10.1109/SPCMTT.2002.1213723","DOIUrl":null,"url":null,"abstract":"The given paper is dedicated to develop the measurement complex for the thin films approval and to investigate their degradation in passing current of high density. The investigations performed on the electrical resistance of Ag thin-film conductors have shown that a combination of optical and scanning tunnel microscopy allows one to track the macroscopic samples destruction and to investigate the changing of the surface morphology on different scale levels. The results obtained can be used in developing new materials for microelectronics.","PeriodicalId":125749,"journal":{"name":"Proceedings of the 8th International Scientific and Practical Conference of Students, Post-graduates and Young Scientists Modern Technique and Technologies, 2002. MTT 2002.","volume":"66 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 8th International Scientific and Practical Conference of Students, Post-graduates and Young Scientists Modern Technique and Technologies, 2002. MTT 2002.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPCMTT.2002.1213723","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The given paper is dedicated to develop the measurement complex for the thin films approval and to investigate their degradation in passing current of high density. The investigations performed on the electrical resistance of Ag thin-film conductors have shown that a combination of optical and scanning tunnel microscopy allows one to track the macroscopic samples destruction and to investigate the changing of the surface morphology on different scale levels. The results obtained can be used in developing new materials for microelectronics.
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