Nonlinear modeling of compound semiconductor HEMTs state of the art

W. Curtice
{"title":"Nonlinear modeling of compound semiconductor HEMTs state of the art","authors":"W. Curtice","doi":"10.1109/MWSYM.2010.5518285","DOIUrl":null,"url":null,"abstract":"This paper will review the state-of-the-art for modeling compound semiconductor HFETs and HEMTs for microwave power applications. Some simple physics shows why SPICE models, or compact models, cannot contain all aspects of the device operation. Because the models are incomplete, any given model may always be improved and thus, modifiable user-defined compact models are preferred. In particular, Verilog-A coded models are shown to have many desirable features. Minimum modeling requirements for accurate system and circuit simulation are described, as well as present modeling techniques.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2010.5518285","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 12

Abstract

This paper will review the state-of-the-art for modeling compound semiconductor HFETs and HEMTs for microwave power applications. Some simple physics shows why SPICE models, or compact models, cannot contain all aspects of the device operation. Because the models are incomplete, any given model may always be improved and thus, modifiable user-defined compact models are preferred. In particular, Verilog-A coded models are shown to have many desirable features. Minimum modeling requirements for accurate system and circuit simulation are described, as well as present modeling techniques.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
化合物半导体hemt的非线性建模研究进展
本文将回顾微波功率应用中化合物半导体hfet和hemt的建模研究进展。一些简单的物理说明了为什么SPICE模型,或紧凑模型,不能包含设备操作的所有方面。由于模型是不完整的,任何给定的模型都可能被改进,因此,可修改的用户定义的紧凑模型是首选。特别是,Verilog-A编码模型显示出许多令人满意的特性。描述了精确系统和电路仿真的最低建模要求,以及目前的建模技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A new approach to design low cost, low complexity phased arrays Use of ground planes within the spatial images technique: Application to the analysis of rectangular multilayered shielded enclosures Negative and zero group velocity in microstrip/negative-refractive-index transmission-line couplers A dual-mode mm-wave injection-locked frequency divider with greater than 18% locking range in 65nm CMOS Asymmetric multilevel outphasing transmitter using class-E PAs with discrete pulse width modulation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1