Polarity Reversal Effect of a Memristor From the Circuit Point of View and Insights Into the Memristor Fuse

A. Isah, A. S. Tchakoutio Nguetcho, S. Binczak, J. Bilbault
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引用次数: 1

Abstract

As the memristor device is asymmetrical in nature, it is not a bilateral element like the resistor in terms of circuit functionality. Thus, it causes hindrance in some memristor-based applications such as in cellular nonlinear network neighborhood connections and in some application areas where its orientation is essentially expected to act as a bilateral circuit element reliable for bidirectional communication, for example, in signal and image processing or in electrical synapse devices. We introduce a memristor-based network for each purpose where we replace the conventional series resistances by memristors. The memristor asymmetry is described from the circuit point of view allowing us to observe its interaction within the network. Moreover, a memristor fuse is proposed in order to achieve the memristive effect with symmetry, which is formed basically by connecting two memristors antiserially. We, therefore, analyze the memristor fuse from its basic principle along with the theoretical analysis and then observe the response from the circuit point of view.
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从电路角度看忆阻器的极性反转效应及对忆阻熔断器的认识
由于忆阻器器件本质上是不对称的,因此就电路功能而言,它不像电阻器那样是一个双边元件。因此,它会在一些基于忆阻器的应用中造成阻碍,例如在细胞非线性网络邻域连接中,以及在一些应用领域中,它的方向基本上被期望作为双向通信可靠的双边电路元件,例如在信号和图像处理或电突触设备中。我们为每个目的引入了一个基于忆阻器的网络,我们用忆阻器取代了传统的串联电阻。从电路的角度描述了忆阻器的不对称性,使我们能够观察其在网络中的相互作用。此外,为了实现对称的忆阻效应,提出了一种忆阻熔断器,它基本上是通过将两个忆阻器反串联而形成的。因此,我们从记忆电阻熔断器的基本原理出发,结合理论分析对其进行分析,然后从电路的角度观察其响应。
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