Xiaomeng Shi, Zhenghao Lu, Jianguo Ma, E. Li, K. Yeo, M. Do
{"title":"Investigation of interconnect effects in a transimpedance amplifier","authors":"Xiaomeng Shi, Zhenghao Lu, Jianguo Ma, E. Li, K. Yeo, M. Do","doi":"10.1109/EMCZUR.2006.215002","DOIUrl":null,"url":null,"abstract":"A novel interconnect model is used in the post layout simulation of a transimpedance amplifier working at 10 GB/s data rate. The unnegligible high frequency interconnect effects such as the inductive effect, skin effect, distributed effect, substrate losses, etc. have been considered in the model. Simulation result employing the proposed model is compared with that using conventional foundry provided RC interconnect model. Apparent discrepancy has been observed and the reason is analyzed","PeriodicalId":130489,"journal":{"name":"2006 17th International Zurich Symposium on Electromagnetic Compatibility","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 17th International Zurich Symposium on Electromagnetic Compatibility","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMCZUR.2006.215002","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
A novel interconnect model is used in the post layout simulation of a transimpedance amplifier working at 10 GB/s data rate. The unnegligible high frequency interconnect effects such as the inductive effect, skin effect, distributed effect, substrate losses, etc. have been considered in the model. Simulation result employing the proposed model is compared with that using conventional foundry provided RC interconnect model. Apparent discrepancy has been observed and the reason is analyzed
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