Standard cell library design and optimization methodology for ASAP7 PDK: (Invited paper)

Xiaoqing Xu, Nishi Shah, A. Evans, S. Sinha, B. Cline, G. Yeric
{"title":"Standard cell library design and optimization methodology for ASAP7 PDK: (Invited paper)","authors":"Xiaoqing Xu, Nishi Shah, A. Evans, S. Sinha, B. Cline, G. Yeric","doi":"10.1109/ICCAD.2017.8203890","DOIUrl":null,"url":null,"abstract":"Standard cell libraries are the foundation for the entire back-end design and optimization flow in modern application-specific integrated circuit designs. At 7nm technology node and beyond, standard cell library design and optimization is becoming increasingly difficult due to extremely complex design constraints, as described in the ASAP7 process design kit (PDK). Notable complexities include discrete transistor sizing due to FinFETs, complicated design rules from lithography and restrictive layout space from modern standard cell architectures. The design methodology presented in this paper enables efficient and high-quality standard cell library design and optimization with the ASAP7 PDK. The key techniques include exhaustive transistor sizing for cell timing optimization, transistor placement with generalized Euler paths and back-end design prototyping for library-level explorations.","PeriodicalId":126686,"journal":{"name":"2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"34","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCAD.2017.8203890","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 34

Abstract

Standard cell libraries are the foundation for the entire back-end design and optimization flow in modern application-specific integrated circuit designs. At 7nm technology node and beyond, standard cell library design and optimization is becoming increasingly difficult due to extremely complex design constraints, as described in the ASAP7 process design kit (PDK). Notable complexities include discrete transistor sizing due to FinFETs, complicated design rules from lithography and restrictive layout space from modern standard cell architectures. The design methodology presented in this paper enables efficient and high-quality standard cell library design and optimization with the ASAP7 PDK. The key techniques include exhaustive transistor sizing for cell timing optimization, transistor placement with generalized Euler paths and back-end design prototyping for library-level explorations.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
ASAP7 PDK标准单元库设计与优化方法:(特邀论文)
标准单元库是现代特定应用集成电路设计中整个后端设计和优化流程的基础。如ASAP7制程设计套件(PDK)所述,在7nm及以上技术节点,由于极其复杂的设计约束,标准单元库的设计和优化变得越来越困难。值得注意的复杂性包括finfet导致的分立晶体管尺寸,光刻技术带来的复杂设计规则以及现代标准电池架构带来的限制性布局空间。本文提出的设计方法能够在ASAP7 PDK下实现高效、高质量的标准单元库设计和优化。关键技术包括用于单元时序优化的详尽晶体管尺寸,具有广义欧拉路径的晶体管放置以及用于库级探索的后端设计原型。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Clepsydra: Modeling timing flows in hardware designs A case for low frequency single cycle multi hop NoCs for energy efficiency and high performance P4: Phase-based power/performance prediction of heterogeneous systems via neural networks Cyclist: Accelerating hardware development A coordinated synchronous and asynchronous parallel routing approach for FPGAs
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1