D. Ueo, H. Osabe, K. Inafune, Masayuki Ikebe, Eiichi Sano, Masato Koutanit, Masayuki Ikedat, Koichiro Mashikot
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引用次数: 4
Abstract
Transmitter and receiver antennas monolithically integrated with CMOS LSIs are strongly demanded for reducing the cost of wireless equipment. As the first step toward realizing high-performance antennas on lossy Si substrates, we clarify the design methodology and basic characteristics of inverted-F antennas used for the 7-GHz band corresponding to multi-band OFDM UWB group3 spectrum allocation. An inverted-F antenna along with a low-noise amplifier (LNA) are designed and fabricated using a 0.18-mum mixed signal/RF CMOS process with one poly and six metal layers. Comparisons between measured and calculated antenna gain characteristics are made. Measured antenna gain is about -25 dB in the multi-band OFDM UWB group3 frequency band. Fairly good agreement between measured and designed gains is obtained by taking account of the real geometry of the fabricated chip
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