EFFECTS OF Ar+ SPUTTERING ON VALENCE STATE AND CHEMICAL ENVIRONMENT OF COBALT IN COBALT-DOPED ZINC OXIDE

Zhihua Yong, Tao Liu, Xingyu Gao, Lei Yan, C. Ong, A. Wee
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Abstract

Zn1-xCoxAl0.01O (x = 0, 0.15, 0.2, 0.3) films were fabricated on Si(100) substrates by pulsed laser deposition (PLD). X-ray diffraction (XRD) studies showed that the Co-doped ZnO films are polycrystalline with c-axis orientated wurtzite structure. Photoemission revealed a valence state of 2+ and a tetrahedral coordination of Co in the Co-doped ZnO. Ar+ sputtering was performed to investigate the changes to the valence state and the chemical environment of Co at surface and bulk. After Ar+ sputtering, the film composition was found to be closer to the starting target material. This was confirmed by the results of X-ray fluorescence (XRF) measurements, indicating the Co-doped ZnO film surface is cobalt-rich.
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Ar+溅射对钴掺杂氧化锌中钴价态和化学环境的影响
采用脉冲激光沉积(PLD)技术在Si(100)衬底上制备了zn1 - xcoxal0.010 (x = 0,0.15, 0.2, 0.3)薄膜。x射线衍射(XRD)研究表明,共掺杂ZnO薄膜是具有c轴取向纤锌矿结构的多晶。在共掺杂ZnO中,光电发射显示出2+价态和Co的四面体配位。用Ar+溅射法研究了Co在表面和体上价态和化学环境的变化。经Ar+溅射后,发现薄膜成分更接近起始目标材料。x射线荧光(XRF)测量结果证实了这一点,表明共掺杂ZnO薄膜表面富含钴。
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