{"title":"GaN technology for microwave and millimeter wave applications","authors":"N. Kolias, C. Whelan, T. Kazior, Kurt V. Smith","doi":"10.1109/MWSYM.2010.5518245","DOIUrl":null,"url":null,"abstract":"After many years of development to improve the material and devices, GaN technology is now in production and poised to revolutionize many of today's Radar and Communication systems. In this paper we present an overview of GaN development, focusing on reliability, affordability, and defense applications.","PeriodicalId":341557,"journal":{"name":"2010 IEEE MTT-S International Microwave Symposium","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"17","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE MTT-S International Microwave Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2010.5518245","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 17
Abstract
After many years of development to improve the material and devices, GaN technology is now in production and poised to revolutionize many of today's Radar and Communication systems. In this paper we present an overview of GaN development, focusing on reliability, affordability, and defense applications.
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