{"title":"Germanium field-effect transistors","authors":"D. Alford, F. Garrett, L. Sevin","doi":"10.1109/TBTR2.1962.4503248","DOIUrl":null,"url":null,"abstract":"Part I offers a simple introduction to the field-effect transistor for those who are unfamiliar with the device. Standard device design equations are rewritten to emphasize effects of dimensional changes on d-c parameters. Failure mechanisms are discussed. Part II presents a method for overcoming effects of high leakage currents in FETs. A d-c feedback circuit (similar to one described by middlebrook1 for complementary transistors) is proposed and analyzed, and a practical design procedure and circuit are presented.","PeriodicalId":136909,"journal":{"name":"Ire Transactions on Broadcast and Television Receivers","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1962-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ire Transactions on Broadcast and Television Receivers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/TBTR2.1962.4503248","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Part I offers a simple introduction to the field-effect transistor for those who are unfamiliar with the device. Standard device design equations are rewritten to emphasize effects of dimensional changes on d-c parameters. Failure mechanisms are discussed. Part II presents a method for overcoming effects of high leakage currents in FETs. A d-c feedback circuit (similar to one described by middlebrook1 for complementary transistors) is proposed and analyzed, and a practical design procedure and circuit are presented.
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