J. Vaillancourt, Puminun Vasinajindakaw, Xuejun Lu
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引用次数: 13
Abstract
In this paper, a high operating temperature (HOT) middle wave infrared (MWIR) InAs/GaAs quantum dot (QD) infrared photodetector (QDIP) is reported. The QDIP covers a wide detection spectrum range from 3 μm to 6 μm. A large photoresponsivity of 6.4 A/W at a low bias voltage of 0.5 V and a high peak specific photodetectivity D* of 6.0 × 107cmHz1/2/W were obtained at a high operating temperature of 230 K.
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