A 100nW 6PPM/°C voltage reference with all MOS transistors

Qun-Chao Chen, Liang-Hung Wang
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Abstract

The paper presents a low-voltage low-power CMOS subthreshold voltage reference with no resistors and bipolar junction transistors applied in a wide temperature range. A GGNMOS transistor is used to fine-tune of its curvature compensation in high temperature. The temperature coefficient (TC) is lower than 6ppm/0C in a temperature changed from -40°C to 125°C with different corners. The supply voltage ranges from 0.65V to 2.5V, and the power consumption is 100nW with 1V supply voltage. The power supply rejection ratio (PSRR) without any filter capacitor at 100Hz is lower than -46dB.
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一个100nW 6PPM/°C电压基准与所有MOS晶体管
本文提出了一种适用于宽温度范围的低电压低功耗CMOS亚阈值基准电压,无电阻和双极结晶体管。利用GGNMOS晶体管对其在高温下的曲率补偿进行了微调。在-40℃~ 125℃不同弯角温度范围内,温度系数小于6ppm/0C。供电电压范围为0.65V ~ 2.5V,供电电压1V时,功耗为100nW。100Hz时不带滤波电容的电源抑制比(PSRR)低于-46dB。
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