{"title":"Anisotropy of Carrier Transport Processes in GaMnAs Grown via Low Temperature Molecular Beam Epitaxy","authors":"A. S. Gazizulina, A. Nasirov, P. B. Parchinskiy","doi":"10.1109/ICISCT55600.2022.10146895","DOIUrl":null,"url":null,"abstract":"Anisotropy of the transport properties of GaMnAs epitaxial layers with Mn concentration of 1.4 and 2.8 at. % has been investigated by means of measurements of magnetoresistance and temperature dependence of sheet resistance. The anisotropy of magnetoresistance, measured along [110] and $[1 \\overline{1} 0]$ crystalline direction in high magnetic field region has been observed for both Mn concentration. The differences in temperature dependence of resistance, measured along different crystalline directions, for both above and below $T_{\\mathrm{C}}$ were detected. It was shown that anisotropy of transport properties of GaMnAs could be related with carriers scattering by inhomogeneous distributed Mn ions.","PeriodicalId":332984,"journal":{"name":"2022 International Conference on Information Science and Communications Technologies (ICISCT)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 International Conference on Information Science and Communications Technologies (ICISCT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICISCT55600.2022.10146895","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Anisotropy of the transport properties of GaMnAs epitaxial layers with Mn concentration of 1.4 and 2.8 at. % has been investigated by means of measurements of magnetoresistance and temperature dependence of sheet resistance. The anisotropy of magnetoresistance, measured along [110] and $[1 \overline{1} 0]$ crystalline direction in high magnetic field region has been observed for both Mn concentration. The differences in temperature dependence of resistance, measured along different crystalline directions, for both above and below $T_{\mathrm{C}}$ were detected. It was shown that anisotropy of transport properties of GaMnAs could be related with carriers scattering by inhomogeneous distributed Mn ions.
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