{"title":"Radiation hard bulk CMOS ROM dose rate upset: detailed analysis technique and results","authors":"A. Nikiforov, V.N. Guminov, V. A. Telets","doi":"10.1109/REDW.1997.629796","DOIUrl":null,"url":null,"abstract":"The detailed dose rate effects investigation of a Radiation Hard Bulk Complementary Metal-Oxide-Semiconductor Read Only Memory (CMOS ROM) family is performed with the \"RADON-5E\" pulsed laser simulator. The low-impedance probe technique is used to measure transient responses along the information path inside the chip. It is found that the ROM dose rate upset level is determined by the preamplifier's upset level. The essential dependence of ROM upset duration on the operational frequency is obtained and analyzed.","PeriodicalId":328522,"journal":{"name":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Radiation Effects Data Workshop NSREC Snowmass 1997. Workshop Record Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.1997.629796","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The detailed dose rate effects investigation of a Radiation Hard Bulk Complementary Metal-Oxide-Semiconductor Read Only Memory (CMOS ROM) family is performed with the "RADON-5E" pulsed laser simulator. The low-impedance probe technique is used to measure transient responses along the information path inside the chip. It is found that the ROM dose rate upset level is determined by the preamplifier's upset level. The essential dependence of ROM upset duration on the operational frequency is obtained and analyzed.
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