{"title":"Dual Material Gate-Gate Stack-Elliptical Gate All Around (DMG-GS-EG) MOSFET – A Novel Device Concept for Improved Performance","authors":"P. Pandey, Pooja S Puri, H. Kaur","doi":"10.1109/ICAECC.2018.8479447","DOIUrl":null,"url":null,"abstract":"In this paper, an analytical model for Dual Material Gate-Gate Stack-Elliptical Gate All Around (DMG-GS-EG) MOSFET is presented and by solving Poisson’s equation in cylindrical coordinates and using equivalent radius (Reqv), the electrical properties of DMG-GS-EG are studied. A comparative analysis is also done with Single Material Gate-Elliptical Gate All Around (SMG-EG) MOSFET, Single Material Gate-Gate Stack-Elliptical Gate All Around (SMG-GS-EG) MOSFET and Dual Material Gate-Elliptical Gate All Around (DMG-EG) MOSFET to study the effectiveness of the proposed device in suppressing short-channel effects. A detailed analysis has been done over a wide range of parameters and bias conditions and it is shown that the proposed DMG-GS-EG device shows the most improved and reliable results.","PeriodicalId":106991,"journal":{"name":"2018 Second International Conference on Advances in Electronics, Computers and Communications (ICAECC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Second International Conference on Advances in Electronics, Computers and Communications (ICAECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAECC.2018.8479447","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, an analytical model for Dual Material Gate-Gate Stack-Elliptical Gate All Around (DMG-GS-EG) MOSFET is presented and by solving Poisson’s equation in cylindrical coordinates and using equivalent radius (Reqv), the electrical properties of DMG-GS-EG are studied. A comparative analysis is also done with Single Material Gate-Elliptical Gate All Around (SMG-EG) MOSFET, Single Material Gate-Gate Stack-Elliptical Gate All Around (SMG-GS-EG) MOSFET and Dual Material Gate-Elliptical Gate All Around (DMG-EG) MOSFET to study the effectiveness of the proposed device in suppressing short-channel effects. A detailed analysis has been done over a wide range of parameters and bias conditions and it is shown that the proposed DMG-GS-EG device shows the most improved and reliable results.
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