{"title":"Negative differential conductivity of semiconductor diode with resonance-tunnel border","authors":"E. Prokhorov, O. Botsula","doi":"10.1109/MSMW.2010.5546144","DOIUrl":null,"url":null,"abstract":"1. The diodes of n+-n-n+ with tunnel or resonance-tunnel scopes possess negative differential conductivity (ODP) because of tunneling or resonance tunneling of electrons through the lateral scopes of diodes is showed. 2 The n+-n-n+ diodes with tunnel or resonance-tunnel scopes can be fabricated in a co-planar and in «sandwich» structures is showed. 3. I – V characteristics of n+-n-n+ diodes are analyzed taking into account tunnel or resonance-tunnel is have been analyzed. The region of negative differential conductivity is determined by parameters of tunnel and resonance-tunnel scopes, material of operating diode region and geometry of structure. 4. Large non-linearity of I – V characteristics of considered diodes at small bias voltage can be used for frequency multiplication in millimeter wave range.","PeriodicalId":129834,"journal":{"name":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 INTERNATIONAL KHARKOV SYMPOSIUM ON PHYSICS AND ENGINEERING OF MICROWAVES, MILLIMETER AND SUBMILLIMETER WAVES","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MSMW.2010.5546144","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
1. The diodes of n+-n-n+ with tunnel or resonance-tunnel scopes possess negative differential conductivity (ODP) because of tunneling or resonance tunneling of electrons through the lateral scopes of diodes is showed. 2 The n+-n-n+ diodes with tunnel or resonance-tunnel scopes can be fabricated in a co-planar and in «sandwich» structures is showed. 3. I – V characteristics of n+-n-n+ diodes are analyzed taking into account tunnel or resonance-tunnel is have been analyzed. The region of negative differential conductivity is determined by parameters of tunnel and resonance-tunnel scopes, material of operating diode region and geometry of structure. 4. Large non-linearity of I – V characteristics of considered diodes at small bias voltage can be used for frequency multiplication in millimeter wave range.
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