A Low-Power Maximally-Flat Transconductor in Subthreshold CMOS

L. Fekih-Ahmed
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引用次数: 1

Abstract

A new CMOS wide linear range fully-differential transconductor is proposed. The transconductor employs 5 unbalanced differential pairs with transistor aspect ratios chosen optimally using Padé-type approximation theory. It achieves a linear range of 86mV for a voltage supply of 1V. The total harmonic distortion does not exceed 2% for peak to peak voltages as high as 0.2V and frequencies as high as 1MHz. Monte Carlo simulations revealed that the linear range of the suggested transconductor is not prone to parameter variations.
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一种亚阈值CMOS低功耗最平坦型晶体管
提出了一种新型CMOS宽线性范围全差动变换器。该晶体管采用5个不平衡差分对,晶体管宽高比采用pad型近似理论优选。它在1V电压下实现了86mV的线性范围。峰值电压高达0.2V,频率高达1MHz时,总谐波失真不超过2%。蒙特卡罗模拟表明,所建议的晶体管的线性范围不容易受到参数变化的影响。
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