Semi-empirical aging model development via accelerated aging test

2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD) Pub Date : 2016-06-27 DOI:10.1109/SMACD.2016.7520720

Engin Afacan, Günhan Dündar, A. E. Pusane, I. F. Baskaya

引用次数: 5

Abstract

Modelling of the degradation mechanisms has a crucial role during the aging analysis, which determines the accuracy of the lifetime estimation. Conventionally, analytical and semi-empirical models are utilized during the aging analysis. Analytical models employ deterministic equations during the degradation calculation and they can be scaled for different technology nodes; hence providing flexibility. However, scaling errors and approximations during the model development may degrade the accuracy. On the other hand, semi-empirical models are generated via accelerated aging test (AAT) performed on the silicon, which often promise more reliable results for a given technology. This paper comprehensively examines the semi-empirical modelling process from test chip design to AAT experiments.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

通过加速老化试验建立半经验老化模型

老化机理的建模在老化分析中起着至关重要的作用，它决定了寿命估计的准确性。在进行老化分析时，通常采用分析模型和半经验模型。解析模型在退化计算过程中采用确定性方程，可以根据不同的技术节点进行缩放;因此提供了灵活性。然而，模型开发过程中的比例误差和近似值可能会降低模型的精度。另一方面，半经验模型是通过对硅进行加速老化试验(AAT)产生的，对于给定的技术，这通常承诺更可靠的结果。本文全面考察了从测试芯片设计到AAT实验的半经验建模过程。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

2016 13th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD)

自引率

0.00%

发文量

期刊最新文献

Basic analog and digital circuits with a-IGZO TFTs MATLAB & VHDL-AMS co-simulation environment for IR-UWB transceiver design IIP framework: A tool for reuse-centric analog circuit design Modeling of fully printed organic field effect transistors for circuit design and simulation Synthesis-based methodology for high-speed multi-modulus divider