In0.63Ga0.37As FinFETs using selectively regrown nanowires with peak transconductance of 2.85 mS/μm at Vds = 0.5 V

Abstract

III-V materials such as In-rich In_1-xGa_xAs have attracted much attention for low-power applications due to their excellent electron transport properties. To suppress high off-currents in deeply scaled devices, multi-gate MOSFETs (MuGFETs) such as FinFETs, which have improved electrostatic integrity, may be employed [1]. We have previously demonstrated In_0.53Ga_0.47As FinFETs utilizing selectively regrown nanowires as channel [2]. In this work we report on the next generation of these devices, with increased In-content in the channel, scaled down nanowire dimensions and improved contacts. A record-value of peak transconductance g_{m, peak} = 2.85 mS/um at V_ds = 0.5 V and L_g = 52 nm is achieved. We also report on radio-frequency (RF) measurements, with extrapolated cut-off frequency of f_t = 281 GHz and maximum oscillation frequency f_max = 365 GHz.