A 10kV/200A SiC MOSFET module with series-parallel hybrid connection

Abstract

In this paper, a high voltage SiC MOSFET module with series-parallel hybrid topology is presented and analyzed. The module consists of two uniform parts in parallel and each of the part includes three sub-parts in series. The sub-part contains three primary parts connected in string where each of these parts has a parallel of two SiC MOSFETs. These SiC MOSFETs are divided into six sub-modules, which are driven by a common driving signal. A 10kV/200A SiC MOSFETs module is fabricated based on this hybrid topology with thirty-six 1200V/40A SiC MOSFET chips. The dynamic switching behavior of the module is tested and analyzed at 5400V/200A with a switching speed of 440ns in turn-on process and 250ns in turn-off process.