{"title":"Broadband Dual-Gate FET Continuously Variable Phase Shifter","authors":"M. Kumar, R. Menna, Ho-Chung Huang","doi":"10.1109/MWSYM.1981.1129950","DOIUrl":null,"url":null,"abstract":"This paper describes a broadband, GaAs dual-gate FET phase shifter capable of continuous phase shift from 0/spl deg/ -360/spl deg/ over the 4-8 GHz band. Although the present unit is, in discreet term, it is designed to be compatible with monolithic fabrication technology.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"61 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129950","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
This paper describes a broadband, GaAs dual-gate FET phase shifter capable of continuous phase shift from 0/spl deg/ -360/spl deg/ over the 4-8 GHz band. Although the present unit is, in discreet term, it is designed to be compatible with monolithic fabrication technology.
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