{"title":"EOS Endurance Power Circuits without Depletion Mode Devices","authors":"Shao-Chang Huang, Jian-Hsing Lee, Ching-Ho Li, Sue-Yi Chen, Chih-Hsuan Lin, Chun-Chih Chen, Li-Fan Chen, Gong-Kai Lin, Chien-Wei Wang, K. Hsu, Szu-Chi Chen, S.C. Pai, Fu-Wei Pai, Yin-Wei Peng, Chih-Cherng Liao, Ke-Horng Chen","doi":"10.1109/ICCE-Taiwan55306.2022.9869061","DOIUrl":null,"url":null,"abstract":"Electrical Overstress (EOS) avoiding power integrated circuits (ICs) are often designed with depletion mode NMOSFET. In some applications, there can be no depletion mode NMOSFETs. From device normal operations and EOS analyses, new circuits without depletion mode devices are successfully proposed for approaching device typical operations and EOS endurances.","PeriodicalId":164671,"journal":{"name":"2022 IEEE International Conference on Consumer Electronics - Taiwan","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Consumer Electronics - Taiwan","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCE-Taiwan55306.2022.9869061","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Electrical Overstress (EOS) avoiding power integrated circuits (ICs) are often designed with depletion mode NMOSFET. In some applications, there can be no depletion mode NMOSFETs. From device normal operations and EOS analyses, new circuits without depletion mode devices are successfully proposed for approaching device typical operations and EOS endurances.
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