{"title":"Influence of package parasitic inductance on transient current distribution characteristics of press pack igbt","authors":"Shenyang Mo, Zhibin Zhao, Peng Sun, Ying Lu, Xinling Tang","doi":"10.1109/APCAP.2017.8420381","DOIUrl":null,"url":null,"abstract":"In the switching process of Press Pack IGBT (PPI) device, the phenomenon of nonuniform current distribution happens which cause the different power dissipation on paralleled chips. The phenomenon would be caused by several reason like clamping force, the temperature, as well as the parasitic effects like the parasitic inductance of the emitter structure, the parasitic resistance of the gate connector and the deviation of the paralleled chips characteristic, etc. As the parasitic inductance of the emitter structure is one of the main reasons of the nonuniform current during switching period, the parasitic inductance are extracted from the package structure model in this paper, and the equivalent circuit of device are built to analyze the characteristics of transient current sharing.","PeriodicalId":367467,"journal":{"name":"2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP)","volume":"59 3-B 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 Sixth Asia-Pacific Conference on Antennas and Propagation (APCAP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCAP.2017.8420381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In the switching process of Press Pack IGBT (PPI) device, the phenomenon of nonuniform current distribution happens which cause the different power dissipation on paralleled chips. The phenomenon would be caused by several reason like clamping force, the temperature, as well as the parasitic effects like the parasitic inductance of the emitter structure, the parasitic resistance of the gate connector and the deviation of the paralleled chips characteristic, etc. As the parasitic inductance of the emitter structure is one of the main reasons of the nonuniform current during switching period, the parasitic inductance are extracted from the package structure model in this paper, and the equivalent circuit of device are built to analyze the characteristics of transient current sharing.
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