Nanoscale materials and device characterization via a scanning microwave microscope

H. Tanbakuchi, M. Richter, F. Kienberger, H. Huber
{"title":"Nanoscale materials and device characterization via a scanning microwave microscope","authors":"H. Tanbakuchi, M. Richter, F. Kienberger, H. Huber","doi":"10.1109/COMCAS.2009.5385964","DOIUrl":null,"url":null,"abstract":"The vector network analyzer (VNA) architecture as it exists today has the ability to measure impedances close to the analyzer's own characteristic impedance (i.e., 50 ohms) with good precision up to 100GHz stimulus frequency. However, the measurement precision and resolution provided by a VNA drop by two orders of magnitude as impedance deviates from 50 ohms. We propose a solution that remedies the lack of measurement precision and resolution for large and small impedances when measured by a VNA. A new scanning microwave microscope (SMM) that utilizes a half-wavelength resonator in conjunction with a diplexer connected to a VNA to perform very sensitive capacitance measurements at the tip of a conductive atomic force microscope (AFM) is discussed. These measurements are achieved via transformation of the high impedance (i.e., the very small capacitance between the AFM tip/sample to the ground) to 50 ohms (i.e., the measurement system's characteristic impedance) using a half-wavelength resonator and diplexer.","PeriodicalId":372928,"journal":{"name":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMCAS.2009.5385964","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 16

Abstract

The vector network analyzer (VNA) architecture as it exists today has the ability to measure impedances close to the analyzer's own characteristic impedance (i.e., 50 ohms) with good precision up to 100GHz stimulus frequency. However, the measurement precision and resolution provided by a VNA drop by two orders of magnitude as impedance deviates from 50 ohms. We propose a solution that remedies the lack of measurement precision and resolution for large and small impedances when measured by a VNA. A new scanning microwave microscope (SMM) that utilizes a half-wavelength resonator in conjunction with a diplexer connected to a VNA to perform very sensitive capacitance measurements at the tip of a conductive atomic force microscope (AFM) is discussed. These measurements are achieved via transformation of the high impedance (i.e., the very small capacitance between the AFM tip/sample to the ground) to 50 ohms (i.e., the measurement system's characteristic impedance) using a half-wavelength resonator and diplexer.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
纳米材料和器件的扫描微波显微镜表征
目前存在的矢量网络分析仪(VNA)架构能够测量接近分析仪自身特性阻抗(即50欧姆)的阻抗,精度可达100GHz刺激频率。然而,当阻抗偏离50欧姆时,VNA提供的测量精度和分辨率下降两个数量级。我们提出了一种解决方案,以弥补测量时缺乏测量精度和分辨率的大小阻抗时,由VNA。讨论了一种新型扫描微波显微镜(SMM),该显微镜利用半波长谐振器与连接到VNA的双工器相结合,在导电原子力显微镜(AFM)的尖端进行非常灵敏的电容测量。这些测量是通过使用半波长谐振器和双工器将高阻抗(即AFM尖端/样品与地面之间非常小的电容)转换为50欧姆(即测量系统的特性阻抗)来实现的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A radial 1:6 microstrip divider On the necessity of information transmission channel characteristics consideration in wireless systems planning Optimization of focusing optics of RATAN-600 radio telescope Current sensing with a precision of a few parts per million within a fraction of a second Implications of directional antennas for mobile radio networks
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1