{"title":"Current sensing schemes for use in BiCMOS integrated circuits","authors":"M. Corsi","doi":"10.1109/BIPOL.1995.493865","DOIUrl":null,"url":null,"abstract":"In integrated circuits it is often required to devise some scheme to measure or limit current in a power transistor. By using the properties of bipolar transistors several simple circuits can be manufactured that enable accurate sensing of transistor current without the usual bandwidth limitations.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"28","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493865","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 28
Abstract
In integrated circuits it is often required to devise some scheme to measure or limit current in a power transistor. By using the properties of bipolar transistors several simple circuits can be manufactured that enable accurate sensing of transistor current without the usual bandwidth limitations.
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